In a BJT common-emitter amplifier, if input impedance needs to be increased, the preferred biasing technique is:
Q.22Medium
For a given application, selecting a BJT with higher β (current gain) results in:
Q.23Medium
Which of the following statements about tunnel diodes is INCORRECT?
Q.24Medium
In a BJT, the early voltage (V_A) represents:
Q.25Medium
A photodiode is operated in photovoltaic mode when:
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Q.26Medium
In an optocoupler (photocoupler), the coupling efficiency depends on:
Q.27Medium
In a MESFET (Metal-Semiconductor FET), compared to MOSFET:
Q.28Medium
A varactor diode is used in frequency modulation circuits because:
Q.29Medium
For an IMPATT diode oscillator, the 'IMPATT' stands for:
Q.30Medium
A CMOS inverter has asymmetric rise and fall times primarily because:
Q.31Medium
The output impedance of a BJT common-collector amplifier is approximately:
Q.32Medium
Which of the following statements about Schottky diodes is incorrect?
Q.33Medium
A BJT has β = 100 and early voltage VA = 80 V. If IC = 2 mA and VCE = 10 V, what is the small signal output resistance ro?
Q.34Medium
In a MOSFET, the transconductance gm depends on which parameters in saturation region?
Q.35Medium
A light-emitting diode (LED) has a bandgap of 2.5 eV. What is the approximate wavelength of emitted light?
Q.36Medium
A thyristor (SCR) is triggered into conduction. To turn it off, which method is most commonly used in AC circuits?
Q.37Medium
A DIAC is used in a light dimmer circuit. What is its primary characteristic?
Q.38Medium
In a BJT common-emitter amplifier with emitter bypass capacitor, what is the primary effect on voltage gain?
Q.39Medium
A device operates with reverse saturation current IS = 10^-14 A at 25°C. If temperature increases to 75°C, by approximately what factor does IS increase?
Q.40Medium
A germanium BJT has a base-emitter voltage VBE = 0.3 V in forward bias. Compared to a silicon BJT with VBE = 0.7 V, which statement is correct?
