JEE Physics - MCQ Practice Questions

Which of the following is a direct bandgap semiconductor?

At absolute zero temperature, the number of free electrons in an intrinsic semiconductor is:

The bandgap of silicon at room temperature (300 K) is approximately:

A p-type semiconductor is created by doping silicon with:

An LED emits light because:

In an intrinsic semiconductor at room temperature, if the bandgap energy is Eg, what is the relationship between electron and hole concentrations?

When a p-type semiconductor is doped with donor atoms instead of acceptors, what happens to the Fermi level position?

Which of the following statements about the bandgap of semiconductors is correct?

The pinch-off voltage Vp in a JFET is the gate voltage at which:

In a p-n junction diode at thermal equilibrium, the direction of the electric field in the depletion region is:

The band gap energy of Germanium at room temperature (300K) is approximately:

When a semiconductor is doped with donor atoms, the Fermi level shifts:

A zener diode is used in reverse bias to:

In a BJT (Bipolar Junction Transistor) in active mode, the base-emitter junction is:

When a semiconductor is exposed to light with photon energy greater than band gap energy, the phenomenon is:

At room temperature (300 K), the intrinsic carrier concentration of silicon is approximately:

In a p-n junction at equilibrium, the potential difference across the junction is called:

In an intrinsic semiconductor at room temperature, what is the relationship between electron concentration (n_e) and hole concentration (n_h)?

The forbidden energy gap (E_g) of germanium at 300K is approximately:

In a p-type semiconductor, the majority carriers are: