JEE Physics - MCQ Practice Questions

In forward biasing of a p-n junction, the depletion region width:

The reverse saturation current in a p-n junction diode depends on:

Zener breakdown in a semiconductor occurs when:

At thermal equilibrium in a semiconductor, the product of electron and hole concentrations is:

A BJT transistor operates in saturation region when:

The Hall effect coefficient (RH) for an n-type semiconductor is:

The photo-generated current in a solar cell is proportional to:

The conductivity of a semiconductor is given by σ = e(neμe + nhμh). If temperature increases from 300K to 400K, which factor primarily determines the change in conductivity?

In a reverse-biased p-n junction, the depletion width increases when:

A silicon semiconductor has ni = 1.5 × 10^10 cm^-3 at 300K. If doped with 10^16 cm^-3 donor atoms, calculate the hole concentration at thermal equilibrium.

The reverse saturation current (I₀) in a p-n junction increases exponentially with temperature. This is primarily because:

In a Zener diode, the Zener breakdown occurs due to:

A compound semiconductor like GaAs has a direct bandgap while Si has an indirect bandgap. Which statement about light emission is correct?

The minority carrier diffusion length Ln in a semiconductor depends on which parameters?

In an n-channel JFET (Junction Field Effect Transistor), when the gate-source voltage (Vgs) becomes more negative, what happens to the channel conductance?

A photodiode operates in reverse bias to:

In a solar cell, the maximum power output occurs when the operating point satisfies which condition?

In the Einstein relation for semiconductors, the ratio of diffusion coefficient to mobility (D/μ) equals:

The temperature coefficient of resistance for semiconductors is:

In a metal-semiconductor contact, if the metal work function is greater than the semiconductor work function, a __________ barrier is formed: