JEE Physics - MCQ Practice Questions

In an intrinsic semiconductor at room temperature, if the bandgap energy is Eg, what is the relationship between electron and hole concentrations?

When a p-type semiconductor is doped with donor atoms instead of acceptors, what happens to the Fermi level position?

The conductivity of a semiconductor is given by σ = e(neμe + nhμh). If temperature increases from 300K to 400K, which factor primarily determines the change in conductivity?

In a reverse-biased p-n junction, the depletion width increases when:

A silicon semiconductor has ni = 1.5 × 10^10 cm^-3 at 300K. If doped with 10^16 cm^-3 donor atoms, calculate the hole concentration at thermal equilibrium.

The reverse saturation current (I₀) in a p-n junction increases exponentially with temperature. This is primarily because:

In a forward-biased p-n junction diode at room temperature, if the applied voltage is increased from 0.3V to 0.6V, by approximately what factor does the forward current increase? (assume kT/e ≈ 26mV)

Which of the following statements about the bandgap of semiconductors is correct?

In a Zener diode, the Zener breakdown occurs due to:

A compound semiconductor like GaAs has a direct bandgap while Si has an indirect bandgap. Which statement about light emission is correct?

The minority carrier diffusion length Ln in a semiconductor depends on which parameters?

In an n-channel JFET (Junction Field Effect Transistor), when the gate-source voltage (Vgs) becomes more negative, what happens to the channel conductance?

The pinch-off voltage Vp in a JFET is the gate voltage at which:

A photodiode operates in reverse bias to:

In a solar cell, the maximum power output occurs when the operating point satisfies which condition?

The fill factor of a solar cell is defined as:

In an avalanche photodiode (APD), the internal gain (multiplication factor M) increases significantly due to:

The specific contact resistance of a metal-semiconductor junction is proportional to:

In the Einstein relation for semiconductors, the ratio of diffusion coefficient to mobility (D/μ) equals:

Which combination of semiconductor parameters would result in the highest intrinsic carrier concentration at 300K?