JEE Physics - MCQ Practice Questions

In a p-n junction diode at thermal equilibrium, the direction of the electric field in the depletion region is:

The band gap energy of Germanium at room temperature (300K) is approximately:

When a semiconductor is doped with donor atoms, the Fermi level shifts:

The temperature coefficient of resistance for semiconductors is:

In a metal-semiconductor contact, if the metal work function is greater than the semiconductor work function, a __________ barrier is formed:

A zener diode is used in reverse bias to:

In an LED, the wavelength of emitted light depends on:

The Hall coefficient for a p-type semiconductor is:

In a BJT (Bipolar Junction Transistor) in active mode, the base-emitter junction is:

The transconductance (gm) of a MOSFET increases with:

A solar cell's efficiency is reduced by all the following EXCEPT:

In a tunnel diode, negative differential resistance occurs because:

The output impedance of a common-emitter amplifier is determined primarily by:

When a semiconductor is exposed to light with photon energy greater than band gap energy, the phenomenon is:

The current gain (β) of a BJT at constant IC depends on:

In a MOSFET, the threshold voltage VT is defined as the gate voltage at which:

The noise figure of a semiconductor amplifier is lowest when operating at:

In a p-n junction under reverse bias, the depletion width increases because:

The Shockley ideal diode equation predicts that reverse saturation current (Is) is proportional to:

At room temperature (300 K), the intrinsic carrier concentration of silicon is approximately: