JEE Physics - MCQ Practice Questions

What is the primary cause of temperature dependence of bandgap energy in semiconductors?

In a p-n junction at equilibrium, the potential difference across the junction is called:

When a p-n junction is forward biased, the width of the depletion region:

The reverse saturation current (I₀) of a diode doubles approximately every:

What is the typical doping concentration for a lightly doped side of a p-n junction used in photodiodes?

In a Zener diode, negative resistance occurs in the breakdown region because:

The Zener voltage of a heavily doped p-n junction is typically lower than that of a lightly doped junction because:

When a BJT enters saturation, the relationship between collector and base current is best described as:

The Early voltage (V_A) of a BJT is inversely related to:

In a JFET, pinch-off occurs when:

The subthreshold swing (SS) of a MOSFET is defined as the change in gate voltage required to change drain current by one decade. For an ideal MOSFET, SS at room temperature is approximately:

Channel length modulation in a MOSFET leads to:

The body effect in a MOSFET (substrate bias effect) occurs because:

In a metal-semiconductor (Schottky) junction, the barrier height is primarily determined by:

Compared to a p-n junction diode, a Schottky diode has:

The quantum well structure in modern semiconductors is primarily used for:

Heterojunctions (like AlGaAs/GaAs) provide advantages over homojunctions primarily because:

In a p-i-n photodiode, the intrinsic region serves to:

In an intrinsic semiconductor at room temperature, what is the relationship between electron concentration (n_e) and hole concentration (n_h)?

The forbidden energy gap (E_g) of germanium at 300K is approximately: