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Electronics (ECE) - MCQ Practice Questions

Practice free Electronics (ECE) multiple-choice questions with detailed answers and explanations. Perfect for competitive exam preparation.

400 questions | 100% Free

Q.61Medium

In a BJT, the early voltage (V_A) represents:

Q.62Hard

The transconductance (g_m) of a MOSFET in saturation is given by:

Q.63Medium

A photodiode is operated in photovoltaic mode when:

Q.64Medium

In an optocoupler (photocoupler), the coupling efficiency depends on:

Q.65Hard

The thermal runaway condition in a BJT occurs because:

Q.66Easy

A JFET is depletion-type because:

Q.67Medium

In a MESFET (Metal-Semiconductor FET), compared to MOSFET:

Q.68Hard

The charge storage time in a BJT switch is primarily due to:

Q.69Medium

A varactor diode is used in frequency modulation circuits because:

Q.70Hard

In a PIN diode used as an RF switch, the operating principle is based on:

Q.71Hard

The noise figure of an amplifier is defined as:

Q.72Medium

For an IMPATT diode oscillator, the 'IMPATT' stands for:

Q.73Hard

The substrate effect in a MOSFET causes:

Q.74Medium

A CMOS inverter has asymmetric rise and fall times primarily because:

Q.75Medium

The output impedance of a BJT common-collector amplifier is approximately:

Q.76Easy

In a silicon BJT at room temperature, for every 10°C increase in temperature, the leakage current I_CO approximately:

Q.77Easy

A clamping diode in logic circuits is used to:

Q.78Hard

The frequency response of a BJT amplifier is limited at high frequencies primarily by:

Q.79Easy

A Zener diode is operating in reverse breakdown with a current of 50 mA. If the Zener resistance is 5 Ω and Zener voltage is 12 V, what is the terminal voltage?

Q.80Medium

Which of the following statements about Schottky diodes is incorrect?