JEE Physics - MCQ Practice Questions

In a p-type semiconductor, the majority carriers are:

When a p-n junction is reverse biased, the width of the depletion region:

The diode equation for current through a p-n junction is I = I_s(e^(qV/kT) - 1). Here, I_s is:

In a BJT operating in active mode, which of the following is correct?

The current gain β (beta) of a BJT is defined as:

In a MOSFET, the threshold voltage V_T increases with:

In an n-channel MOSFET operating in saturation region, the drain current is approximately:

The transconductance g_m of a MOSFET in saturation is:

Which semiconductor material has the highest electron mobility at room temperature?

In a light-emitting diode (LED), the color of emitted light depends primarily on:

A solar cell operates as a p-n junction under illumination. The maximum power output occurs at:

In a Zener diode, breakdown voltage is primarily determined by:

In a tunnel diode, the negative resistance region occurs due to:

The transconductance parameter μ_n × C_ox in a MOSFET depends on:

In FinFET technology (used in modern 7nm and 5nm nodes), multiple gates are used to:

In a CMOS inverter circuit, the propagation delay is minimized when:

In a p-n junction diode, the depletion width is primarily determined by which of the following factors?

A photodiode is reverse-biased to operate in photoconductive mode. What is the primary advantage of this configuration over photovoltaic mode?

In a BJT transistor, the Early effect causes the collector current to increase slightly with increasing reverse bias on the collector-base junction. This is due to:

A rectifier circuit uses a silicon diode with V_f = 0.7V and a germanium diode with V_f = 0.3V at the same forward current. Which statement is CORRECT regarding their applications in 2024 technology?